| 摘要 |
PROBLEM TO BE SOLVED: To provide a field effect transistor with high breakdown voltage and low on-resistance. SOLUTION: A semiconductor substrate constituted by laminating an epitaxial region 221 of a SiC semiconductor 211 and a groove 360 formed on a prescribed part on one surface of the semiconductor substrate 211 are installed on the SiC semiconductor substrate 211. The transistor includes a gate semiconductor region 253 formed on an inner face of the groove 360, an N-type embedded channel region 262 formed in an epitaxial region 221 becoming an outer side of the P-type gate semiconductor region 253, and a channel region 382 formed of a P-type body semiconductor region 254 formed on an outer side of the embedded channel region 262. The transistor also includes a source region 242 formed on an upper side of the embedded channel region 262, a gate electrode 282 formed on an inner side of the gate semiconductor region 253 through a gate insulating film 272, and a gate electrode 292 formed on the other surface of the semiconductor substrate 211. COPYRIGHT: (C)2006,JPO&NCIPI
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