| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which is protected against a latch-up phenomenon, improved in noise reduction properties as much as possible, and improved in reliability of its circuit operation. SOLUTION: The semiconductor device is composed of a GND pad 2, a preamplifier circuit 7, and an output circuit 8 which is driven by signals outputted from the preamplifier circuit 7. These are integrated on the same semiconductor substrate 1. The semiconductor device is equipped with a first GND interconnect line 3-1 which is led out from the GND pad 2 and connected to the output circuit 8, and a second GND interconnect line 3-3 which is led out from the GND pad 2 branching off from the first GND interconnect line 3-1 and connected to the preamplifier circuit 7. The semiconductor device is configured in a manner wherein substrate contacts 6a to 6e are provided to the first GND interconnect line 3-1, and no substrate contact is provided to the second GND interconnect line 3-3. The preamplifier circuit 7 is formed of a differential amplifier circuit 10 whose input end is biased by a bias circuit (resistors 11 and 12) which is at least connected to the second GND interconnect line 3-3. COPYRIGHT: (C)2006,JPO&NCIPI
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