SiC SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide an SiC semiconductor device capable of obtaining an excellent ohmic contact to an n-type SiC substrate while sufficiently avoiding the generation of a graphite, and a manufacturing method for the SiC semiconductor device. SOLUTION: In the manufacturing method for the SiC semiconductor device 10A, a first layer 2a1is formed on the electrode forming region of the n-type SiC substrate 1, a second layer 2b1is formed on the first layer 2a1, and an electrode is formed on the electrode forming region by annealing the first layer 2a1and the second layer 2b1. In the manufacturing method for the SiC semiconductor device 10A, the first layer 2a1is formed of one of either of Ni, Cu, W, Co, Mo, Ta, Pd and Ti, and an alloy composed of two or more of Ni, Cu, W, Co, Mo, Ta, Pd and Ti. In the manufacturing method for the SiC semiconductor device 10A, the second layer 2b1is formed of Si. COPYRIGHT: (C)2006,JPO&NCIPI