发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a technology of preventing ignition occurring during a maintenance operation for a thin-film-forming apparatus for forming a thin film made from a material active to oxygen. SOLUTION: This technology includes forming a metallic film MF1 containing oxygen on a target shield TGS, an exhaust shield EXS, a gas distribution plate GDB, a ring chuck RCK and the like, which are members composing the inner surface of a film-forming chamber of the thin-film-forming apparatus, or members arranged in the film-forming chamber, by previously thermal-spraying a metal on the surfaces. Thereby, when fine particles active to oxygen deposit on the surfaces of the members, oxygen in the metallic film MF1 diffuses into the deposited fine particles, and forms an oxide film OF1 to convert the fine particles active to oxygen, into an inactive state (chemically stable state). COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006083430(A) 申请公布日期 2006.03.30
申请号 JP20040269482 申请日期 2004.09.16
申请人 RENESAS TECHNOLOGY CORP 发明人 BAN KAZUHIRO;MIYAMA YOSHIO;YAMAMOTO MASASHI;MITSUI KATSUHIRO
分类号 C23C14/34 主分类号 C23C14/34
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