发明名称 Alignment method of exposure mask and manufacturing method of thin film element substrate
摘要 A method for aligning an exposure mask comprises: using a plurality of hologram masks, on which an alignment mark is formed; aligning position of the hologram masks toward an object to be exposed and on which an alignment mark is also formed, with a plurality of times by using both alignment marks; and pattern-exposing the object, wherein, while aligning at least three consecutive times, an alignment mark for third time aligning on the object is set in between alignment marks respectively for second time aligning and first time aligning, or at a position on an opposite side to a side in which the alignment mark for second time aligning is located with respect to the alignment mark for first time aligning.
申请公布号 US2006068304(A1) 申请公布日期 2006.03.30
申请号 US20050223956 申请日期 2005.09.13
申请人 SEIKO EPSON CORPORATION 发明人 IRIGUCHI CHIHARU
分类号 G03F9/00;G03C5/00;G03F1/76;G03F7/20;G03H1/22;H01L21/027 主分类号 G03F9/00
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