发明名称 Integrated circuit memory devices that support detection of write errors occuring during power failures and methods of operating same
摘要 Integrated circuit devices that support error detection include a non-volatile memory device having a memory array therein containing a plurality of pages of memory cells. A memory controller is also provided. The memory controller is electrically coupled to the non-volatile memory device and is configured to provide the non-volatile memory device with a plurality of segments of page data during a page write operation. The plurality of segments of page data include a plurality of segments of checksum data that identify a number of non-volatile memory cells to be programmed with write data during the page write operation. Additional checksum data is also generated for comparison and error detection purposes during a page read operation.
申请公布号 US2006069851(A1) 申请公布日期 2006.03.30
申请号 US20040020705 申请日期 2004.12.22
申请人 CHUNG HYUN-MO;PARK CHAN-IK 发明人 CHUNG HYUN-MO;PARK CHAN-IK
分类号 G06F13/00 主分类号 G06F13/00
代理机构 代理人
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