| 摘要 |
An exposure method includes the steps of providing a mask that arranges a contact-hole pattern and a pattern smaller than the contact-hole pattern, and illuminating the mask using plural kinds of light so as to resolve the contact-hole pattern and restrain the smaller pattern from resolving on an object to be exposed via a projection optical system, wherein the following conditions are met A=-1.7k<SUB>1</SUB>+C1, 1.2<=C1<=1.3, 0.5<=B<=0.55 and B<=A-0.1, 0.80<=sigma<=0.9 and sigma>=A+ 0.1 , k<SUB>1</SUB>=(L/lambda) NA, where k<SUB>1 </SUB>is resolving power, L is a hole diameter of the contact-hole pattern, lambda is a wavelength for exposure, NA is a numerical aperture of the projection optical system, sigma is a ratio of a numerical aperture of an illumination optical system to the numerical aperture of the projection optical system, A and B are distances from two orthogonal axes to a boarder of a light-shielding part in an effective light source for illumination of plural kinds of light, the light-shielding part being symmetrical with respect to the two orthogonal axes. |
