| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor apparatus, etc. which can manufacture the semiconductor apparatus with high performance without using expensive and precision exposure device and etching device. SOLUTION: At least one particulate 20 which is made of a single crystal silicon into micropore 13 formed on the silicon oxide film 12 is arranged, and an amorphous silicon film 21 is formed on this. Then, a laser beam is irradiated to the amorphous silicon film 21 from upward, a crystal growth is performed with the silicon particulate as nucleus, and thereby forming a silicon film 14 of substantially single crystal state having a large grain size. A TFT is formed so that a channel region falls within at least the part of the silicon film 14 of this substantially single crystal state. COPYRIGHT: (C)2006,JPO&NCIPI
|
