| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging device which suppresses the degradation of characteristics accompanied by miniaturization, and facilitates an electronic shuttering operation in an AGP. SOLUTION: The solid-state imaging device comprises an identical conductive type n well 24 to a semiconductor substrate 20 formed in the surface region of the semiconductor substrate 20, a plurality of isolation regions which are disposed in substantially parallel to one another across a given distance in the surface region of the semiconductor substrate 20 and of reverse conductive types with respect to the semiconductor substrate 20 defining the n well 24, and a plurality of transfer electrodes 32 which extend in a direction intersecting with the isolation region on the semiconductor substrate 20 and are disposed in substantially parallel to one another. In the surface region of the semiconductor substrate 20 in which at least one of pairs of the transfer electrodes 32 constituting one pixel is provided, an n<SP>+</SP>region 29 having impurity density higher than the n well 24 is selectively formed, thereby solving the problem. COPYRIGHT: (C)2006,JPO&NCIPI
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