发明名称 |
ESD protection circuit with floating diffusion regions |
摘要 |
This invention discloses an electrostatic discharge (ESD) protection circuit that comprises a substrate of a predetermined type, at least one MOS transistor being coupled to a pad of an integrated circuit for dissipating an ESD current from the pad during an ESD event, a substrate contact region, and at least one floating diffusion region formed in a substrate area between the MOS transistor and the substrate contact region for reducing a trigger-on voltage of the MOS transistor during the ESD event.
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申请公布号 |
US2006065933(A1) |
申请公布日期 |
2006.03.30 |
申请号 |
US20040956795 |
申请日期 |
2004.09.30 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHU YU-HUNG;HUANG SHAO-CHANG;SONG MING-HSIANG |
分类号 |
H01L23/62 |
主分类号 |
H01L23/62 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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