| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an exposure mask in which the phase difference between a shifter portion and a non-shifter portion can be measured with high accuracy, and to provide a method for manufacturing the mask. <P>SOLUTION: The exposure mask includes: two first light shielding patterns 11c for a device, the patterns jutting over a first recess 10a and formed at a first distance W1 from each other above a quartz substrate (transparent substrate) 10 in a device region I; a second light shielding pattern 11d for the device, the pattern formed at a second distance W2 from the first light shielding pattern 11c for the device; two first light shielding patterns 11e for monitoring, the patterns jutting over a second recess 10b and formed at a third distance W3 from each other which is larger than the first distance W1, above the quartz substrate 10 in a monitoring region II; and a second light shielding pattern 11f for monitoring, the pattern formed at a fourth distance W4 larger than the second distance W2 and from the first light shielding pattern 11e for monitoring. The dimension L2 of the first light shielding pattern 11e for monitoring is equal to or smaller than the dimension L1 of the first light shielding pattern 11c for the device. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
