| 摘要 |
<P>PROBLEM TO BE SOLVED: To enable stable plasma processing for the long term by reducing the wear of the component covered with yttrium oxide on the inner surface of a plasma processing chamber. <P>SOLUTION: There are provided a vacuum processing chamber 107 wherein yttrium oxide is formed on the inner wall thereof to be brought in contact with the plasma, a gas supplying means for supplying a processing gas into the processing chamber, a plasma forming means 104 for forming the plasma in the processing chamber by providing an antenna and supplying a high-frequency power into the processing chamber from a first high-frequency power supply 101, a substrate electrode 109 disposed in the processing chamber on which a specimen is placed, and a second high-frequency power supply 111 for supplying a high-frequency bias voltage to the substrate electrode. At each end of the processing of one or more specimens, the inner surface of the processing chamber is subjected to the plasma processing in a gas containing chlorine and no fluorine, and containing silicon atoms or boron atoms. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
