发明名称 |
Hybrid memory device and method for manufacturing the same |
摘要 |
A hybrid memory device includes a plurality of regions including a memory cell array region upon which are formed a plurality of memory cells and a logic circuit region upon which is formed a logic circuit device, and is provided with a liner oxide layer formed on a region covering the logic circuit region except the memory cell array region and a cover layer formed on the liner oxide layer while extending to the memory cell array region.
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申请公布号 |
US2006065917(A1) |
申请公布日期 |
2006.03.30 |
申请号 |
US20050228188 |
申请日期 |
2005.09.19 |
申请人 |
KAJITA YOKO;KOIWA ICHIRO;KANEHARA TAKAO;ASHIKAGA KINYA;ABE KAZUHIDE |
发明人 |
KAJITA YOKO;KOIWA ICHIRO;KANEHARA TAKAO;ASHIKAGA KINYA;ABE KAZUHIDE |
分类号 |
H01L29/94 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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