发明名称 Circuit to connect high and low voltage signals especially to control a semiconductor memory has low voltage logic unit holding memory and voltage increase circuit
摘要 <p>A circuit to connect high and low voltage signals, especially to control a semiconductor memory, comprises a low voltage logic unit (16) giving signals (0/1)(Sel,Selinv) for a memory (49) giving a corresponding output (CG). The low voltage signal is raised to high voltage (HVP,HVN) using high voltage transistors (MP,MN) with gate connections (G). An independent claim is also included for an operating process for the above circuit.</p>
申请公布号 DE102004045903(A1) 申请公布日期 2006.03.30
申请号 DE20041045903 申请日期 2004.09.22
申请人 INFINEON TECHNOLOGIES AG 发明人 DARRER, FRANZ-MICHAEL
分类号 G11C16/30;G11C8/08 主分类号 G11C16/30
代理机构 代理人
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