Non-volatile memory device having self-aligned double layered floating gate structure and method of fabricating the same,申请号KR20040038191-传众专利搜索

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发明名称	Non-volatile memory device having self-aligned double layered floating gate structure and method of fabricating the same
摘要
申请公布号	KR100564627(B1)	申请公布日期	2006.03.29
申请号	KR20040038191	申请日期	2004.05.28
申请人		发明人
分类号	H01L27/115	主分类号	H01L27/115
代理机构		代理人
主权项
地址

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