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发明名称
APPARATUS AND METHOD FOR SPLIT TRANSISTOR MEMORY HAVING IMPROVED ENDURANCE
摘要
申请公布号
EP1639646(A2)
申请公布日期
2006.03.29
申请号
EP20040756458
申请日期
2004.06.29
申请人
MICRON TECHNOLOGY, INC.
发明人
FORBES, LEONARD
分类号
H01L21/8246;H01L21/8247;H01L27/115;(IPC1-7):H01L27/115;H01L21/824
主分类号
H01L21/8246
代理机构
代理人
主权项
地址
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