发明名称 |
Method for implanting atomic species through an uneven surface of a semiconductor layer |
摘要 |
A method for implanting atomic species through an uneven surface of a semiconductor layer. The technique includes applying a covering layer upon the uneven surface in an amount sufficient and in a manner to increase surface uniformity. The method also includes implanting atomic species through the covering layer and uneven surface to obtain a more uniform depth of implantation of the atomic species in the layer.
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申请公布号 |
US7018913(B2) |
申请公布日期 |
2006.03.28 |
申请号 |
US20040840599 |
申请日期 |
2004.05.05 |
申请人 |
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES S.A. |
发明人 |
GHYSELEN BRUNO;AKATSU TAKESHI |
分类号 |
H01L21/20;H01L21/265;H01L21/36;H01L21/762 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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