| 发明名称 |
CMP slurry compositions for oxide films and methods for forming metal line contact plugs using the same |
| 摘要 |
CMP slurries for oxide film and a method for forming a metal line contact plug of a semiconductor device are described herein. When a polishing process of a multi-layer film is performed by using the disclosed CMP slurry for oxide film including an HXO<SUB>n </SUB>compound (wherein n is an integer from 1 to 4), a stable landing plug poly can be formed by preventing step differences by reducing interlayer polishing speed differences.
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| 申请公布号 |
US7018924(B2) |
申请公布日期 |
2006.03.28 |
| 申请号 |
US20030603976 |
申请日期 |
2003.06.25 |
| 申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
JUNG JONG GOO;LEE SANG ICK |
| 分类号 |
C09K3/14;H01L21/4763;C09G1/02;C09K13/04;H01L21/304;H01L21/3105;H01L21/3205;H01L21/321;H01L21/768;H01L21/8242;H01L27/108 |
主分类号 |
C09K3/14 |
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