发明名称 |
Method of making a device threshold control of front-gate silicon-on-insulator MOSFET using a self-aligned back-gate |
摘要 |
provides SOI CMOS technology whereby a polysilicon back-gate is used to control the threshold voltage of the front-gate device, and the nMOS and pMOS back-gates are switched independently of each other and the front gates. Specifically, the present invention provides a method of fabricating a back-gated fully depleted CMOS device in which the device's back-gate is self-aligned to the device's front-gate as well as the source/drain extension. Such a structure minimizes the capacitance, while enhancing the device and circuit performance. The back-gated fully depleted CMOS device of the present invention is fabricated using existing SIMOX (separation by ion implantation of oxygen) or bonded SOI wafer bonding and thinning, polySi etching, low-pressure chemical vapor deposition and chemical-mechanical polishing.
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申请公布号 |
US7018873(B2) |
申请公布日期 |
2006.03.28 |
申请号 |
US20030639942 |
申请日期 |
2003.08.13 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DENNARD ROBERT H.;HAENSCH WILFRIED E.;HANAFI HUSSEIN I. |
分类号 |
H01L21/00;H01L21/336;H01L21/762;H01L29/786 |
主分类号 |
H01L21/00 |
代理机构 |
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地址 |
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