| 摘要 |
A field effect transistor is provided in which a drain current is not influenced by fluctuation of a gate voltage. In order to set the transistor in an on state (conductive state), a voltage equal to or more than a threshold voltage is applied to an inversion layer formation region ( 19 ) via a gate electrode ( 12 ) to thereby form an inversion layer. Charge inducted by the inversion layer moves to a channel region ( 18 ) and make the Fermi level of the channel region ( 18 ) fluctuate, and then, a potential barrier between a source region ( 16 ) and the channel region ( 18 ) is lowered. As a result, carriers can climb over the barrier and move from the source region ( 16 ) to a drain region ( 17 ), and thus, a drain current flows. |
