发明名称 |
Fabrication method of nitride semiconductors and nitride semiconductor structure fabricated thereby |
摘要 |
Disclosed is a method of fabricating nitride semiconductors in a MOCVD reactor. GaN is first deposited on an inner wall of the MOCVD reactor, and a sapphire substrate is loaded into the MOCVD reactor. The sapphire substrate is heated and etching gas is injected into the MOCVD reactor. NH<SUB>3 </SUB>gas is injected into the MOCVD reactor to nitrify the surface of the sapphire substrate. A nitride semiconductor layer is grown on the nitrified sapphire substrate. By surface-reforming the sapphire substrate and then growing the nitride semiconductor layer on the surface-reformed sapphire substrate via MOCVD without formation of a low temperature buffer layer, an excellent nitride semiconductor structure can be realized. In this circumstance, the nitride semiconductor layer for example of GaN can be grown effectively on the surface-treated sapphire substrate because GaN deposition occurs on the sapphire substrate while it is etched.
|
申请公布号 |
US7018912(B2) |
申请公布日期 |
2006.03.28 |
申请号 |
US20040806432 |
申请日期 |
2004.03.23 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
KIM SUN WOON;KIM IN EUNG;HAHM HUN JOO;LEE SOO MIN;KIM DONG JOON;KIM JE WON |
分类号 |
H01L21/00;C30B25/02;C30B29/40;H01L21/20;H01L21/205 |
主分类号 |
H01L21/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|