发明名称 |
Substrate treating method, substrate-processing apparatus, developing method, method of manufacturing a semiconductor device, and method of cleaning a developing solution nozzle |
摘要 |
There is disclosed a substrate treating method comprising supplying a treating solution onto a substrate, and continuously discharging a first cleaning solution to the substrate from a first discharge region disposed in a nozzle, while moving the nozzle and substrate with respect to each other in one direction, wherein a length of a direction crossing at right angles to the direction of the first discharge region is equal to or more than a maximum diameter or longest side of the substrate, the nozzle continuously spouts a first gas to the substrate from a first jet region, and the length of a direction crossing at right angles to the direction of the first jet region is equal to or more than the maximum diameter or longest side of the substrate.
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申请公布号 |
US7018481(B2) |
申请公布日期 |
2006.03.28 |
申请号 |
US20030351422 |
申请日期 |
2003.01.27 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
HAYASAKI KEI;ITO SHINICHI;EMA TATSUHIKO;TAKAHASHI RIICHIRO |
分类号 |
G03F7/30;H01L21/027;B08B1/04;B08B3/02;B08B5/02;H01L21/311 |
主分类号 |
G03F7/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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