| 摘要 |
Multiple metallization layers in a partially fabricated integrated circuit are formed in a single process step. As a place-holder for the later-deposited metallization layers, sacrificial material is deposited in the integrated circuit at desired locations at various fabrication levels over a substrate. The sacrificial material is then removed to form a contiguous open volume spanning multiple fabrication levels. A conductor is then deposited in the open volume to form multiple metallization layers in a single step.
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