发明名称 Semiconductor device
摘要 A semiconductor device includes a semiconductor substrate having an element region, and an element isolation region formed around the element region, the element isolation region being formed of an insulation material having a higher thermal expansion coefficient than the element region.
申请公布号 US7019380(B2) 申请公布日期 2006.03.28
申请号 US20040804206 申请日期 2004.03.19
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 SANUKI TOMOYA
分类号 H01L29/00;H01L27/01;H01L27/12;H01L29/786 主分类号 H01L29/00
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