发明名称 |
Electrically erasable programmable read only memory (EEPROM) cells and methods of fabricating the same |
摘要 |
Electrically erasable programmable read only memory (EEPROM) cells and methods of fabricating the same are provided. An EEPROM cell includes an isolation layer formed at a semiconductor substrate to define an active region. A source region, a buried N+ region and a drain region are serially disposed at the active region. A memory gate is disposed to cross-over the buried N+ region. A first channel region is formed between the source region and the buried N+ region. A tunnel region is located between the buried N+ region and the memory gate and self-aligned with the buried N+ region.
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申请公布号 |
US7019354(B2) |
申请公布日期 |
2006.03.28 |
申请号 |
US20040761488 |
申请日期 |
2004.01.21 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM YOUNG-HO;SHIN HO-BONG |
分类号 |
H01L29/788;H01L21/8247;H01L27/115;H01L29/792 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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