| 摘要 |
An isolation film for semiconductor devices is formed from a pad oxide film and a pad nitride film on a substrate, etching the pad nitride film, the pad oxide film and the substrate to form a trench in an active region of the substrate; forming a sidewall oxide film on the surface of the trench; removing the pad nitride film; forming a linear nitride film on the sidewall oxide film and the pad oxide film; removing a portion of the pad oxide film on the substrate; removing the exposed pad oxide film to expose the field region of the substrate; oxidizing the exposed field region to form an oxide film; removing the sidewall oxide film to expose the active region of the substrate; and forming a silicon epitaxial layer serving as an active layer on the exposed active region of the substrate to the same height as the oxide film.
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