| 摘要 |
The present invention provides a method for manufacturing a semiconductor device and method for manufacturing an integrated circuit including the semiconductor device. The method for manufacturing a semiconductor device ( 100 ), among other steps, includes forming a gate structure ( 130 ) over a substrate ( 110 ), the gate structure ( 130 ) having sidewall spacers ( 210 or 410 ) on opposing sidewalls thereof and placing source/drain implants ( 310, 510 ) into the substrate ( 110 ) proximate the gate structure ( 130 ). The method further includes removing at least a portion of the sidewall spacers ( 210 or 410 ) and annealing the source/drain implants ( 310, 510 ) to form source/drain regions ( 710 ) after removing the at least a portion of the sidewall spacers ( 210 or 410 ).
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