| 摘要 |
In order to determine the dielectric constant of a layer deposited on a semiconducotr wafer ( 2 ), the density of the layer is obtained. To obtain that density, the wafer ( 2 ) without the layer is weighed in a weighing chamber ( 4 ) in which a weighing pan ( 7 ) supports the wafer on a weighing balance. The weight of the wafer is determined taking into account the buoyancy exerted by the air on the wafer ( 2 ). Then the layer is deposited on the wafer ( 2 ) and the weighing operation repeated. Alternatively a reference wafer may be used. If the material of the layer is known, the weight of the layer can be used to derive its density using a thickness measurement. Alternatively, if the density is known, the thickness can be obtained.
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