发明名称 |
Patterning for elongated VSS contact flash memory |
摘要 |
A method of forming a contact in a flash memory device is disclosed. The method increases the depth of focus margin and the overlay margin between the contact and the stacked gate layers. A plurality of stacked gate layers are formed on a semiconductor substrate, wherein each stacked gate layer extends in a predefined direction and is substantially parallel to other stacked gate layers. An interlayer insulating layer is deposited over the plurality of stacked gate layers, and a contact hole is patterned between a first stacked gate layer of the plurality of stacked gate layers and a second stacked gate layer of the plurality of stacked gate layers. The contact hole is formed in an elongated shape, wherein a major axis of the contact hole is substantially parallel to the stacked gate layers. A conductive layer is deposited in the contact hole and excess conductive material is removed.
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申请公布号 |
US7018922(B1) |
申请公布日期 |
2006.03.28 |
申请号 |
US20040968713 |
申请日期 |
2004.10.19 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
KIM HUNG-EIL;MINVIELLE ANNA;LYONS CHRISTOPHER F.;PLAT MARINA V.;SUBRAMANIAN RAMKUMAR |
分类号 |
H01L21/4763;H01L21/768;H01L21/8247;H01L27/115 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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