| 摘要 |
A TFT ESD protective circuit disposed between a scanning signal line or a data signal line and a Vcom. The protective circuit includes a positive ESD protective unit and a negative ESD protective unit. Each of the positive static protective unit and negative static protective unit is composed of three TFT. In the case that the gate insulating layer of any of the three TFT is broken down by electrostatic voltage, the remaining two TFT can still normally operate and keep truly providing static protective function.
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