| 摘要 |
Bottom electrodes of stacked capacitor cells are formed by lining a patterned hard mask with a conductive layer. The hard mask is formed by a layered stack. Subsequent to the formation of trenches within the hard mask, the top-most masking layer of the layer stack is laterally recessed. The bottom electrode layer is then deposited to line the trenches. Following this, the bottom electrode layer is removed from the top of the hardmask. Subsequently, the hard mask is removed. As a result, released and free-standing elements of the conductive layer are formed as bottom electrodes that include a hydrophobic contact area in the top part of the bottom electrodes.
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