发明名称 |
Siloxane-based resin and method for forming insulating film between interconnect layers in semiconductor devices by using the same |
摘要 |
Disclosed herein are siloxane-based resins prepared by hydrolyzing and polycondensing cyclic and/or cage-shape siloxane compounds, optionally with at least one silane compound, in an organic solvent in the presence of a catalyst and water. Also, disclosed herein are methods for forming insulating film between interconnect layers in semiconductor devices by using the siloxane-based resins thus prepared as low dielectric insulating materials.
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申请公布号 |
US7019099(B2) |
申请公布日期 |
2006.03.28 |
申请号 |
US20030621380 |
申请日期 |
2003.07.18 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LYU YI YEOL;YIM JIN HEONG;MAH SANG KOOK;NAH EUN JU;HWANG IL SUN;JEONG HYUN DAM;KIM JUNG HYUNG |
分类号 |
C08G77/18;C08G77/04;C08G77/50;H01B3/46;H01L21/312;H01L21/316 |
主分类号 |
C08G77/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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