Method of providing multiple logical bits per memory cell
摘要
A semiconductor substrate is provided over which electrically conductive columns are formed along with electrically conductive rows crossing over the electrically conductive columns. A plurality of memory components are formed each having a resistance value corresponding to multiple logical bits and non-volatile memory cells are each formed by connecting a memory component between an electrically conductive row and an electrically conductive column.
申请公布号
US7019381(B2)
申请公布日期
2006.03.28
申请号
US20030611544
申请日期
2003.07.01
申请人
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
发明人
SMITH KENNETH K.;BRANDENBERGER SARAH M.;BLOOMQUIST, LEGAL REPRESENTATIVE JUDY;ELDREDGE KENNETH J.;VAN BROCKLIN ANDREW L.;FRICKE PETER J.