MASK PATTERN FOR MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE HAVING FINE PATTERNS

摘要

Methods of forming an integrated circuit device may include forming a resist pattern on a layer of an integrated circuit device with portions of the layer being exposed through openings of the resist pattern. An organic-inorganic hybrid siloxane network film may be formed on the resist pattern. Portions of the layer exposed through the resist pattern and the organic-inorganic hybrid siloxane network film may then be removed. Related structures are also discussed.