发明名称 |
Calibration standards for dopants/impurities in silicon and preparation method |
摘要 |
A multi-point calibration standards and a method of fabricating calibration standards which are used to quantify the dose or concentration of a dopant or impurity in a silicon matrix. The calibration standards include a set of calibration standard wafers for each dopant or impurity to be quantified. On each calibration standard wafer in the set is provided a silicon matrix incorporated with one of various concentrations, by weight, of the dopant or impurity in the silicon. The atomic concentration of the dopant or impurity in the silicon on each wafer in the set is measured. A calibration curve is then prepared in which the silicon/dopant or silicon/impurity ratio on each calibration standard wafer in the set is plotted versus the atomic concentration of the dopant or impurity in the silicon on the wafer.
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申请公布号 |
US7018856(B2) |
申请公布日期 |
2006.03.28 |
申请号 |
US20040768882 |
申请日期 |
2004.01.29 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD |
发明人 |
WAN CHIA-CHING;YU MIN-TA |
分类号 |
H01L21/66;G01R31/26;H01L21/20;H01L21/36;H01L21/44;H01L23/544 |
主分类号 |
H01L21/66 |
代理机构 |
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主权项 |
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地址 |
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