发明名称 Lithographic apparatus method and computer programproduct for generating a mask pattern and device manufacturing method using same
摘要 Grayscale Optical Proximity Correction device features are added to a mask pattern by convoluting the device features with a two-dimensional correction kernel or two one-dimensional correction kernels to generate grayscale OPC features. The resulting pattern may be used in a projection lithography apparatus having a programmable patterning means that is adapted to generate three or more intensity levels. An iterative process of simulating an aerial image that would be produced by the pattern, comparing the simulation to the desired pattern, and adjusting the OPC features may be used to generate an optimum pattern for projection
申请公布号 SG120264(A1) 申请公布日期 2006.03.28
申请号 SG20050005154 申请日期 2005.08.12
申请人 ASML NETHERLANDS B.V. 发明人 JOHANNES JACOBUS MATHEUS BASELMANS;KARL DIEDERICK VAN DER MAST;KARS ZEGER TROOST
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