发明名称 Semiconductor device and manufacturing method thereof
摘要 A TFT is manufactured using at least five photomasks in a conventional liquid crystal display device, and therefore the manufacturing cost is high. By performing the formation of the pixel electrode 127 , the source region 123 and the drain region 124 by using three photomasks in three photolithography steps, a liquid crystal display device prepared with a pixel TFT portion, having a reverse stagger type n-channel TFT, and a storage capacitor can be realized.
申请公布号 US7019329(B2) 申请公布日期 2006.03.28
申请号 US20040852260 申请日期 2004.05.25
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI SHUNPEI;KUWABARA HIDEAKI;ARAI YASUYUKI
分类号 G02F1/136;H01L29/04;G02F1/1368;G09F9/30;H01L21/00;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/786;H01L31/036;H01L31/0376;H01L31/20 主分类号 G02F1/136
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