发明名称 |
Semiconductor device and manufacturing method thereof |
摘要 |
A TFT is manufactured using at least five photomasks in a conventional liquid crystal display device, and therefore the manufacturing cost is high. By performing the formation of the pixel electrode 127 , the source region 123 and the drain region 124 by using three photomasks in three photolithography steps, a liquid crystal display device prepared with a pixel TFT portion, having a reverse stagger type n-channel TFT, and a storage capacitor can be realized. |
申请公布号 |
US7019329(B2) |
申请公布日期 |
2006.03.28 |
申请号 |
US20040852260 |
申请日期 |
2004.05.25 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;KUWABARA HIDEAKI;ARAI YASUYUKI |
分类号 |
G02F1/136;H01L29/04;G02F1/1368;G09F9/30;H01L21/00;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/786;H01L31/036;H01L31/0376;H01L31/20 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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