NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

In one embodiment, a semiconductor device includes a semiconductor substrate having a first junction region and a second junction region. An insulated floating gate is disposed on the substrate. The floating gate at least partially overlaps the first junction region. An insulated program gate is disposed on the floating gate. The program gate has a curved upper surface. The semiconductor device further includes an insulated erase gate disposed on the substrate and adjacent the floating gate. The erase gate partially overlaps the second junction region.