| 摘要 |
The wafer 11 that is the object of polishing is held by a polishing head 12, and rotates together with the polishing head 12. A polishing body 14 is attached to the polishing member 13 by bonding using an adhesive agent or two-sided adhesive tape, etc. As is shown in (b), the polishing body 14 is constructed by laminating a soft member 15, a hard elastic member 16 and a polishing pad 17. The hard elastic member 16 is constructed so that the amount of deformation of the hard elastic member 16 at the polishing load that is applied during polishing is smaller than the step difference that is permitted in the above-mentioned wafer in the interval corresponding to the maximum pattern of the above-mentioned semiconductor integrated circuits, and is larger than the TTV that is permitted in the above-mentioned wafer in the interval corresponding to one chip. As a result, the requirements of both "wafer global removal uniformity" and local pattern planarity" can be satisfied. |
