发明名称 PLASMA PROCESSING DEVICE AND PLASMA PROCESSING METHOD
摘要 That surface of an electrode plate 20 which is opposite to a susceptor 10 has a projection shape. The electrode plate 20 is fitted in an opening 26a of shield ring 26 at a projection 20a. At this time, the thickness of the projection 20a is approximately the same as the thickness of the shield ring 26. Accordingly, the electrode plate 20 and the shield ring 26 form substantially the same plane. The major surface of the projection 20a has a diameter 1.2 to 1.5 times the diameter of a wafer W. The electrode plate 20 is formed of, for example, SiC.
申请公布号 KR100564168(B1) 申请公布日期 2006.03.27
申请号 KR20037009600 申请日期 2003.07.19
申请人 发明人
分类号 H01L21/3065 主分类号 H01L21/3065
代理机构 代理人
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