| 摘要 |
PROBLEM TO BE SOLVED: To prevent a reaction product from sticking to an inner wall face of an intermediate flow liner 3 and to make film thickness and composition of an obtained semiconductor thin film uniform in a vapor phase growth device which is provided with an upstream flow liner, the intermediate flow liner and a down stream flow liner, in which semiconductor material gas is made to flow from the upstream flow liner, the semiconductor thin film is grown on a substrate loaded in the intermediate flow liner and exhaust gas is discharged from the down stream flow liner. SOLUTION: A cooling part 11 is arranged on an outer wall face of the intermediate flow liner 3, and cooling gas is made to flow to an upstream side from a down stream side of the intermediate flow liner 3. The cooling part 11 is composed of a cooling cylinder 12 and a cooling gas lead-in pipe 13. The cooling cylinder 12 forms a gutter-like shape. One end is opened and the cooling gas lead-in pipe 13 is connected to the other end. COPYRIGHT: (C)2006,JPO&NCIPI
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