| 摘要 |
PROBLEM TO BE SOLVED: To provide a quantum nano-structure semiconductor laser which has such a structure that uses no embedding structure and can be manufactured by a simplified and highly reproductive manufacturing process, and which is superior in reduction of threshold and stability of oscillation frequency. SOLUTION: A ridge 21 is formed on a compound semiconductor substrate 11, and it is like a stripe with a lengthwise direction in the light advancing direction of a laser light to be oscillated, and is provided with a plurality of V-shaped grooves 22 that extend at a right angle to the light advancing direction and are arranged side by side parallel to each other along the light advancing direction. An optical waveguide including a lower clad layer 12 formed through successive crystal growth, a plurality of quantum wires 13 and an upper clad layer 14 are formed on the ridge 21. The quantum wires 13 are formed at positions corresponding respectively to the V-shaped grooves 22, and a laser active layer area which has a limited length corresponding to the stripe width of the laser light to be oscillated is provided to them respectively. The waveguide is trapezoidal, and it is exposed while its circumferential side is not embedded at least at a height or more of the quantum wire 13, or it is not covered with a layer other than the insulating layer 17. COPYRIGHT: (C)2006,JPO&NCIPI
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