| 摘要 |
PROBLEM TO BE SOLVED: To shorten crystallization time of a semiconductor thin film by developing crystallization along the length of a shaft at the same time. SOLUTION: A semiconductor substrate 21 wherein an amorphous silicon thin film 28 is applied on its surface is placed on a placement table 20. A thermal application part 30 has a structure where a roller 34 can turn around a shaft 32, and it can be moved vertically and horizontally by a supporting mechanism 50. The shaft 32 is provided with an embedded heat source 38 generating heat by using electric power of power supply 40 for heat source. The heat source 38 is located lower toward an advancing direction 100. The power supply 40 is controlled by a control unit 60 to increase the temperature of the heat source 38 to a specified range of 800-1,100°C, and while the supporting mechanism 50 is controlled to keep the thermal application part 30 at a specified height, the roller 34 is brought into contact with the surface of the amorphous silicon thin film 28, and the thermal application part 30 is moved in the advancing direction 100 at a specified speed. COPYRIGHT: (C)2006,JPO&NCIPI
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