发明名称 |
Semiconductor light emitting device and fabrication method of the same |
摘要 |
The invention provides a semiconductor light emitting device and the fabrication method of the same. The semiconductor light emitting device according to the invention comprises a multi-layer light emitting structure and a heat conducting layer. The multi-layer light emitting structure comprises a first layer. The first layer has an exposed first surface, and it also has a first thermal conductivity. The heat conducting layer is formed on and covers the first layer. The heat conducting layer has a second thermal conductivity, wherein the second thermal conductivity is greater than the first thermal conductivity
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申请公布号 |
US2006060869(A1) |
申请公布日期 |
2006.03.23 |
申请号 |
US20050195528 |
申请日期 |
2005.08.01 |
申请人 |
UNITED EPITAXY COMPANY, LTD. |
发明人 |
YANG CHENG-CHUNG;MA SHAO-KUN;TU CHUAN-CHENG;WU JEN-CHAU |
分类号 |
H01L33/42;H01L33/46;H01L33/64 |
主分类号 |
H01L33/42 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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