| 发明名称 |
Method of manufacturing split gate type nonvolatile memory device |
| 摘要 |
A method of manufacturing a split gate type nonvolatile semiconductor memory device in which control gates are formed by a self aligning process.
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| 申请公布号 |
US2006063333(A1) |
申请公布日期 |
2006.03.23 |
| 申请号 |
US20050262767 |
申请日期 |
2005.11.01 |
| 申请人 |
|
发明人 |
JEON HEE-SEOG;YOON SEUNG-BEOM |
| 分类号 |
H01L21/336;H01L21/8239;H01L21/8247;H01L27/105;H01L27/115;H01L29/78;H01L29/788;H01L29/792 |
主分类号 |
H01L21/336 |
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代理人 |
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| 主权项 |
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| 地址 |
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