| 摘要 |
A semiconductor device having a plurality of electrothermal conversion elements (31-33) and a plurality of switching elements for flowing current through the electrothermal conversion elements, respectively formed on a semiconductor substrate (1) of a first conductivity type, wherein each of the switching elements is an insulated gate field effect transistor (Tr1,Tr2,Tr3) including: a first semiconductor region (2) of a second conductivity type opposite to the first conductivity type, the first semiconductor region being formed on a principal surface of the semiconductor substrate (1), a second semiconductor region (6) of the first conductivity type for providing a channel region, the second semiconductor region (6) being formed adjacent to the first semiconductor region (2), a source region (7) of the second conductivity type formed in a surface layer of the second semiconductor region (6), a drain region (8,9) of the second conductivity type formed in a surface layer of the first semiconductor region (2), and a gate electrode (4) formed on a gate insulating film on the channel region, and a resistivity of the semiconductor substrate (1) is 5 to 18 OMEGA cm, and the first semiconductor region (2) has a depth of 2.0 to 2.2 mu m along a depth direction of the semiconductor substrate and an impurity concentration of 1 x 10<14> to 1 x 10<18>/cm<3>. <IMAGE> |
