| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device where reliability is improved by improving a shielding effect and where microfabrication is possible. SOLUTION: The semiconductor device comprises a semiconductor layer 10 having an area 10A to be shielded, semiconductor elements 100 and 120 provided at the semiconductor layer 10 of the area 10A to be shielded, a first interlayer insulation layer 40 provided over the semiconductor elements 100 and 120, a plurality of first shielding layer 44 provided over the first interlayer insulation layer 40, a second interlayer insulation layer 50 provided over the first shielding layers 44 at least, and a second shielding layer 54 of a prescribed pattern provided over the second interlayer insulation layer 50. The second shielding layer 54 has such a pattern as is positioned between the first shielding layers 44 adjacent to each other at least. COPYRIGHT: (C)2006,JPO&NCIPI |
