| 摘要 |
PROBLEM TO BE SOLVED: To prevent thermal runaway of a transistor by suppressing a drop of transistor gain and to miniaturize a transistor integrated circuit device. SOLUTION: For a resistor connected to a base electrode of each transistor, a resistor having a sufficient low resistance value in a frequency of a high frequency signal and a sufficient resistance value as ballast resistance to a direct current is used. Consequently, thermal runaway of transistors Tr11 to Tr1n can be prevented while suppressing a reduction in the gain of the transistors Tr11 to Tr1n to the high frequency signal. A capacitor is not connected to each transistor. This can miniaturize this transistor integrated circuit device. COPYRIGHT: (C)2006,JPO&NCIPI
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