Phosphorus activated NMOS using SiC process

摘要

A method ( 10 ) of forming a transistor ( 100 ) includes treating ( 12 ) at least some of a semiconductor substrate ( 102 ) with carbon and then forming ( 18 ) a gate structure ( 114 ) over the semiconductor substrate. A channel region ( 122 ) is thereby being defined within the semiconductor substrate ( 102 ) below the gate structure ( 114 ). Source and drain regions ( 140, 142 ) are then formed ( 26 ) within the semiconductor substrate ( 102 ) on opposing sides of the channel ( 122 ) with a phosphorus dopant.