发明名称 |
Transistor-Halbleiterbauteil |
摘要 |
<p>Transistor type semiconductor module (1) comprises semiconductor structure (2) with several, mutually insulated gates (6) coupled to gate energizer. At least one gate is separated from gate energizer and serves as potential measuring line after coupling to potential meter.Preferably gate(s), serving as measuring line, are linked to certain points of module so that potentials at these points can be determined via gates. Typically contact film (3) is deposited on semiconductor structure for contacting source or body regions.</p> |
申请公布号 |
DE10343083(B4) |
申请公布日期 |
2006.03.23 |
申请号 |
DE2003143083 |
申请日期 |
2003.09.17 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
ROSMEIER, LUDWIG;RACKI, MATHIAS;ZUNDEL, MARKUS;SANDER, RAINALD;THIELE, STEFFEN |
分类号 |
H01L23/544;H01L21/66;H01L23/58;H01L29/06;H01L29/40;H01L29/423;H01L29/78 |
主分类号 |
H01L23/544 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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